Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects
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چکیده
منابع مشابه
Evidence of ultra-low-k dielectric material degradation and nanostructure alteration of the Cu/ultra-low-k interconnects in time-dependent dielectric breakdown failure
alteration of the Cu/ultra-low-k interconnects in time-dependent dielectric breakdown failure Jeffrey C. K. Lam, Maggie Y. M. Huang, Tsu Hau Ng, Mohammed Khalid Bin Dawood, Fan Zhang, Anyan Du, Handong Sun, Zexiang Shen, and Zhihong Mai GLOBALFOUNDRIES Singapore Pte Ltd, Woodlands Industrial Park D, Street 2, Singapore 738406 Division of Physics and Applied Physics, School of Physical and Mathe...
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Thermal stability of a porous low-k film is a critical issue for application consideration in the back-end-of-line. In this study, thermal stability of the porous silicate has been investigated by changing the thermal processing temperatures. Experimental results have shown that the dielectric constant of the porous silicate still remains below 2.0 after thermal processing at 500 8C for 1 h. A ...
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The scaling of silicon-based MOSFET technology beyond the 22 nm node is challenging. Further progress requires new channel materials such as Ge, III-V semiconductors, carbon nanotubes (CNTs) and graphene. Perfect top-gate dielectric stacks are needed in order to sustain their potential device performance for carbon nanoelectronics. Due to the inert nature of carbon surfaces of CNTs and graphene...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2020
ISSN: 2168-6734
DOI: 10.1109/jeds.2020.2975074